The study specifically included sapphire materials with varying levels of corrosion pit distortion (EPD) to determine if EPD would affect LED manufacturing. The study involved the entire LED chip manufacturing process for sapphire and concluded that all materials met the LED standard and did not find any correlation between LED performance and the ESD rating of the CHES chip.
One of the main advantages of ARC Energy's CHES furnaces is that they greatly improve material utilization because sapphire grows on the c-plane. This method produces a larger diameter substrate at a lower cost. By using the c-plane ARC Energy CHES furnace, the material utilization rate can reach more than 75%, while the material utilization rate by other methods will not exceed 35%. The CHES furnace also features a high degree of automation that reduces operator costs and keeps output consistent.
The CHES furnace is designed to produce sapphire with higher performance and larger chip diameter than other old technologies. The CHES furnace produces high-yield sapphire up to 10 inches in diameter, increasing the upstream and downstream efficiency of the LED manufacturing process, as c-plane growth can significantly reduce waste.
The results show that the sapphire grown in the CHES furnace can achieve production-grade performance. With the expansion of the HB-LED market, CHES brings significant advantages to sapphire growth companies, including higher throughput, scalable technology and higher LED chip performance. ARC Energy offers CHES furnaces and a range of support services for crystal growth companies that want to lead the HB-LED industry.
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